(July 14, 2016) Recently Raytheon has developed a “SiC-based high-temperature small-form-factor power module for electrical switching in harsh environments,” according to Semiconductor-Today.com.
Semiconductor-Today reported that, “A prototype module that includes two 1200V silicon carbide (SiC) bipolar junction transistors (BJTs) has currently amassed more than 1000 hours of stable operation at 300oC.”
“The BJTs are controlled by integrated base driver circuitry, fabricated using Raytheon’s propriety High Temperature Silicon Carbide (HiTSiC) process,” and David Gordon, technical lead with Raytheon’s IPS, said that this was a major industry breakthrough.
The module has potential uses in the geothermal power, oil and gas, and aerospace sectors, since it is “aimed at high-speed switching applications” as well as “supporting applications in harsh environments and in meeting high operating temperature demands”, “requires minimal external cooling”, and “presents considerable weight-saving opportunities within the More Electric Aircraft power system.”
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