Presentation on 4H SiC Epitaxial Wafer Quality and Layer Growth

Dow Corning will present at the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM) Oct. 4 through 9.

ICSCRM is a technical conference that provides information on electronics device technology based on silicon carbide (SiC) and related materials.

It brings qualified experts together to discuss crystal growth and characterization, control of material properties, and other research issues.

At the conference, the company plans to demonstrate advances in large-area 4H SiC epitaxial wafer quality and layer growth.

“New devices using wide-bandgap semiconductors like SiC are expected to have a large impact in many power electronics systems, as these devices are significantly more durable, more energy-efficient and faster-switching than devices made from other semiconductor materials,” added the company.

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